6A4 Datasheet | Specifications & PDF Download

6A05 - 6A10 6.0A SILICON RECTIFIER Features · · High Surge Current Capability Low Leakage and Forward Voltage Drop A B A Mechanical Data · · · · ·

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6.0 AMPS. Silicon Rectifiers PLASTIC SILICON RECTIFIERS THRU P600M/P6A10 Voltage Range -50 to 1000 V olts Current -6.0Amperes R-6 Features Low cost

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6A Avg. 400 Volts FRED ECU06A40-F FORWARD CURRENT VS. VOLTAGE 0˚ 180˚ θ CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION 0˚ 180˚ θ CONDUCTION A

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www.DataSheet4U.com MCC Micro Commercial Components TM
     omponents 20736 Marilla Street Chatsworth  # $

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NS6A5.0AFT3G, SZNS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The NS6AxxAFT3G series is designed to prot

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NS6A5.0AFT3G, SZNS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The NS6AxxAFT3G series is designed to prot

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Silicon N-Channel Power MOSFET ○R CS45N06 A4 anGeneral Description： CS45N06 A4 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high de

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Silicon N-Channel Power MOSFET ○R CS100N06 A4 General Description： CS100N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-526A4U is infrared emitting diodes in GaAs technology with AlGaAs window coati

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www.DataSheet4U.com 64Mx72 bits Registered DDR SDRAM DIMM HYMD264G726A(L)4-M/K/H/L DESCRIPTION Hynix HYMD264G726A(L)4-M/K/H/L series is registered

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NS6A5.0AFT3G, SZNS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The NS6AxxAFT3G series is designed to prot

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$  $ 6,/,&215(&7,),(5',2'(6 359  9ROWV ,R  $PSHUHV ' )($785(6  +LJKFXUUHQWFDSDELOLW\  +LJKVXUJHFXUUHQWFDSD

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MITSUMI 150mA CMOS Voltage Regulator IC MM3376AX Series 150mA CMOS Voltage Regulator IC Monolithic IC MM3376AX Series Outline This IC is a regulato

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AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-546A4U is infrared emitting diodes in GaAs technology with AlGaAs window coati

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Silicon N-Channel Power MOSFET ○R CS70N06 A4 General Description： CS70N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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PD6A4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 12mΩ @VGS = 10V ID 35A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25

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AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-516A4U is infrared emitting diodes in GaAs technology with AlGaAs window coati

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Features • High-performance, Low-power AVR 8/16-bit AVR XMEGA Microcontroller • Non-volatile Program and Data Memories – 16K - 128K Bytes of In-System

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Embedded Power for Business-Critical Continuity AUG Series 30 Watts Total Power: 30 Watts Input Voltage: 36V - 75V # of Outputs: Single Rev. 09.20.0

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www.DataSheet4U.com 64Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD264G726A(L)4M-M/K/H/L DESCRIPTION Preliminary Hynix HYMD264G726A(L)4M-M/

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