6A4 Datasheet | Specifications & PDF Download

6A Avg. 400 Volts FRED ECU06A40-F FORWARD CURRENT VS. VOLTAGE 0˚ 180˚ θ CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION 0˚ 180˚ θ CONDUCTION A

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6A05 - 6A10 6.0A SILICON RECTIFIER Features · · High Surge Current Capability Low Leakage and Forward Voltage Drop A B A Mechanical Data · · · · ·

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V-Data Synchronous DRAM VDS4616A4A 512K x 16 Bit x 2 Banks General Description The VDS4616A4A are two-bank Synchronous DRAMs organized as 524,288 wo

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Embedded Power for Business-Critical Continuity AUG Series 30 Watts Total Power: 30 Watts Input Voltage: 36V - 75V # of Outputs: Single Rev. 09.20.0

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www.DataSheet4U.com 64Mx72 bits Registered DDR SDRAM DIMM HYMD264G726A(L)4-M/K/H/L DESCRIPTION Hynix HYMD264G726A(L)4-M/K/H/L series is registered

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Silicon N-Channel Power MOSFET ○R CS45N06 A4 anGeneral Description： CS45N06 A4 the silicon N-channel Enhanced VDMOSFETs, is obtained by the high de

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Silicon N-Channel Power MOSFET ○R CS70N06 A4 General Description： CS70N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den

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8/16-bit Atmel XMEGA Microcontroller ATxmega128A4U / ATxmega64A4U / ATxmega32A4U / ATxmega16A4U Features z High-performance, low-power Atmel® AVR® XME

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SHENZHEN FAST SENSOR CO., LTD PCB/SMD Mount Reed Switch/Sensor Product Name Normally Open Reed Sensor Item No. FRS-16A45H Item Numbers Built-in

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CX06 Vishay Sprague Subminiature, Leaded Solid Tantalum Capacitors FEATURES • Rectangular case with radial leads • 2 to 35 VDC • 0.1µF to 220µF • Ope

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Features • High-performance, Low-power AVR 8/16-bit AVR XMEGA Microcontroller • Non-volatile Program and Data Memories – 16K - 128K Bytes of In-System

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www.DataSheet4U.com 64Mx72 bits Registered DDR SDRAM DIMM HYMD264G726A(L)4-M/K/H/L DESCRIPTION Hynix HYMD264G726A(L)4-M/K/H/L series is registered

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www.DataSheet4U.com 64Mx72 bits Registered DDR SDRAM DIMM HYMD264G726A(L)4-M/K/H/L DESCRIPTION Hynix HYMD264G726A(L)4-M/K/H/L series is registered

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A-Data Synchronous DRAM ADS6616A4A 1M x 16 Bit x 4 Banks General Description The ADS6616A4A are four-bank Synchronous DRAMs organized as 1,048,576 w

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CX06 Vishay Sprague Subminiature, Leaded Solid Tantalum Capacitors FEATURES • Rectangular case with radial leads • 2 to 35 VDC • 0.1µF to 220µF • Ope

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www.DataSheet4U.com 64Mx72 bits Low Profile Registered DDR SDRAM DIMM HYMD264G726A(L)4M-M/K/H/L DESCRIPTION Preliminary Hynix HYMD264G726A(L)4M-M/

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