6A8-G Datasheet | Specifications & PDF Download

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V-Data Revision History Revision 1 ( Dec. 2001 ) 1.Fister release. VDD8616A8A Revision 2 ( Apr. 2002 ) 1. Changed module current specification. 2. A

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V-Data Synchronous DRAM VDS8616A8A 4M x 16 Bit x 4 Banks General Description The VDS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 w

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6A05 THRU 6A10 General Purpose Plastic Rectifier REVERSE VOLTAGE 50 to 1000 Volts FORWARD CURRENT 6.0 Ampere FEATURES DO-201AD(DO-27) Low forward

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK6A80E，ITK6A80E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.7Ω. ·Enhancement mode:

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HTS16A60H_HTS16A80H HTS16A60H/HTS16A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current

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MOSFETs Silicon N-Channel MOS (π-MOS) TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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HTS6A60H_HTS6A80H HTS6A60H/HTS6A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(

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Silicon N-Channel Power MOSFET ○R CS100N06 A8 General Description： CS100N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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2CR106 A8C N ， ， 、 。 N 2CR106 A8C ○R ● ● ● ● ● ● ● VRRM IF（AV） VF（IF=10A） trr（IF=0.5A） 600 10 1.7 35 V A V ns TO-220AC

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Silicon N-Channel Power MOSFET ○R CS180N06 A8 General Description： CS180N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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W956D8MBYA / W956A8MBYA 64Mb HyperRAM Table of Contents- 1. FEATURES

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Silicon N-Channel Power MOSFET ○R CS240N06 A8 General Description： CS240N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T

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32Mx72 bits Unbuffered DDR SO-DIMM HYMD232M726A(L)8-J/M/K/H/L DESCRIPTION Hynix HYMD232M726A(L)8-J/M/K/H/L series is unbuffered 200-pin double data ra

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