6A8-G Datasheet | Specifications & PDF Download

HTS16A60H_HTS16A80H HTS16A60H/HTS16A80H 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current

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W956D8MBYA / W956A8MBYA 64Mb HyperRAM Table of Contents- 1. FEATURES

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6.0 AMPS. Silicon Rectifiers PLASTIC SILICON RECTIFIERS THRU P600M/P6A10 Voltage Range -50 to 1000 V olts Current -6.0Amperes R-6 Features Low cost

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www.DataSheet4U.com MWI 150-06 A8 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 IC25 = 170 A = 600 V VCES VCE(sat) typ. = 2

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MUBW 100-06 A8 Converter - Brake - Inverter Module (CBI3) 21 22 D11 D13 D15 12 3 D7 7 D12 D14 D16 23 T7 14 24 T1 16 15 T2 11 10 D1 T3 18 6 17

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PD6A8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 6.2mΩ @VGS = 10V ID 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25

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2CR106 A8C N ， ， 、 。 N 2CR106 A8C ○R ● ● ● ● ● ● ● VRRM IF（AV） VF（IF=10A） trr（IF=0.5A） 600 10 1.7 35 V A V ns TO-220AC

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EtronTech EM6A8160 4M x 16 DDR Synchronous DRAM (SDRAM) Preliminary (Rev. 1.1, Oct. /2015) Features • Fast clock rate: 200/250 MHz • Differential C

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MUBW 75-06 A8 Converter - Brake - Inverter Module (CBI3) 21 22 D11 D13 D15 12 3 D7 7 D12 D14 D16 23 T7 14 24 T1 16 15 T2 11 10 D1 T3 18 6 17 D

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NS6A5.0AFT3G, SZNS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The NS6AxxAFT3G series is designed to prot

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MOSFETs Silicon N-Channel MOS (π-MOS) TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK6A80E，ITK6A80E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.7Ω. ·Enhancement mode:

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Advanced Technical Information MUBW 50-06 A8 Converter - Brake - Inverter Module (CBI3) 21 D11 1 D12 D13 2 D14 D15 7 3 D16 14 23 24 8 NTC T7 22 D7 T

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BU406 A8 NPN ， ， ， 。 NPN BU406 A8 ○R ● ● ● ● ● ● ● VCEO IC Ptot （TC=25℃） 100 7 60 V A W TO-220AB -10℃～40℃ 1 26

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