General Purpose Rectifiers 6A05-G THRU 6A10-G (RoH.
HTS6A80H - 3 Quadrants Standard TRIAC
HTS6A60H_HTS6A80H HTS6A60H/HTS6A80H 3 Quadrants Standard TRIAC FEATURES Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (IT(.TK6A80E - N-Channel MOSFET
MOSFETs Silicon N-Channel MOS (π-MOS) TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) .BU406A8 - Silicon NPN Transistor
BU406 A8 NPN , , , 。 NPN BU406 A8 ○R ● ● ● ● ● ● ● VCEO IC Ptot (TC=25℃) 100 7 60 V A W TO-220AB -10℃~40℃ 1 26.HTS16A80H - TRIAC
HTS16A60H_HTS16A80H HTS16A60H/HTS16A80H 3 Quadrants Standard TRIAC FEATURES Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current .CS110N06A8-2 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS110N06 A8-2 General Description: CS110N06 A8-2, the silicon N-channel Enhanced VDMOSFETs, is obtained by the hi.CS180N06A8 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS180N06 A8 General Description: CS180N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced T.HTS6A80AS - 6A TRIAC
HTS6A80AS HTS6A80AS 6A TRIAC FEATURES Repetitive Peak Off-State Voltage : 800V R.M.S On–State Current (IT(RMS) = 6A) Gate Trigger Current : 35m.EM6A8160TSA - 4M x 16 DDR Synchronous DRAM
EtronTech EM6A8160TSA Etron Confidential 4M x 16 DDR Synchronous DRAM (SDRAM) Advanced (Rev. 1.2 Apr. /2009) Features • Fast clock rate: 200MHz • .2CR106A8C - N-type Silicon Schottky Rectifier Diode
2CR106 A8C N , , 、 。 N 2CR106 A8C ○R ● ● ● ● ● ● ● VRRM IF(AV) VF(IF=10A) trr(IF=0.5A) 600 10 1.7 35 V A V ns TO-220AC .EM6A8160 - 4M x 16 DDR Synchronous DRAM
EtronTech EM6A8160 4M x 16 DDR Synchronous DRAM (SDRAM) Preliminary (Rev. 1.1, Oct. /2015) Features • Fast clock rate: 200/250 MHz • Differential C.TK6A80E - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK6A80E,ITK6A80E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤1.7Ω. ·Enhancement mode:.ADS16A80F - SCRs
ADV ADS16A60F/80F SCRs General Description The 16A SCR series of silicon.GSIB6A80N - Single-Phase Single In-Line Bridge Rectifiers
GSIB6A20N, GSIB6A40N, GSIB6A60N, GSIB6A80N www.vishay.com Vishay General Semiconductor Single-Phase Single In-Line Bridge Rectifiers FEATURES • U.16A877A - PIC16A877A
PIC16F87XA 28/40/44-Pin Enhanced Flash Microcontrollers Devices Included in this Data Sheet: • PIC16F873A • PIC16F874A • PIC16F876A • PIC16F877A H.PD6A8BA - N-Channel MOSFET
PD6A8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 6.2mΩ @VGS = 10V ID 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25.ADT16A80G - SCRs
ADV ADT16A60G/80G SCRs General Description The 16A SCR series of silicon c.ADT16A80F - SCRs
ADV ADT16A60F/80F SCRs General Description The 16A SCR series of silicon.