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CS180N06A8 - Silicon N-Channel Power MOSFET

General Description

CS180N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

  • VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ 60 V 180 A 245 W 3.2 mΩ.
  • Fast Switching.
  • Low ON Resistance(Rdson≤4mΩ).
  • Low Gate Charge (Typical Data:86.2nC).
  • Low Reverse transfer capacitances(Typical:342pF).
  • 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS180N06A8
Manufacturer CR Micro
File Size 585.29 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS180N06A8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS180N06 A8 General Description： CS180N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ 60 V 180 A 245 W 3.2 mΩ  Fast Switching  Low ON Resistance(Rdson≤4mΩ)  Low Gate Charge (Typical Data:86.2nC)  Low Reverse transfer capacitances(Typical:342pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.