CS180N06A8
Overview
： CS180N06 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
- Fast Switching
- Low ON Resistance(Rdson≤4mΩ)
- Low Gate Charge (Typical Data:86.2nC)
- Low Reverse transfer capacitances(Typical:342pF)
- 100% Single Pulse avalanche energy Test
