CS180N06A0 Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS180N06 A0 General Description： CS180N06 A0, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-263, which accords with the RoHS standard. Features ： VDSS ID（Silicon limited current） PD(TC=25℃) RDS(ON)Typ 60 V 180 A 245 W 3.2 mΩ l Fast Switching l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:86.2nC) l Low Reverse transfer capacitances(Typical:342pF) l 100% Single Pulse...