7.7GHz Datasheet | Specifications & PDF Download

AC243433 2.3GHz-2.7GHz High Linearity Power Amplifier Features ■ 35dB Gain(Typ) ■ 33dBm P-1dB @ VCC=5V ■ 2.5% EVM WLAN @Pout=27dBm, VCC=5V ■ 320mA Qu

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www.DataSheet4U.com VGA-P014458-QGG RoHS COMPLIANT 17-27GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD package Description The P014

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www.DataSheet4U.com Preliminary Product Description Sirenza Microdevices’ SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (

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AWM6423 2.5-2.7 GHz WiMAX PowerAmplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • • • • • • InGaP HBT Technology 30 dB Gain 2.5 %

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www.DataSheet4U.com RF56023.3V to 5.0 V, 2.3GHz to 2.7GHz Linear Power Amplifier Proposed RF5602 3.3V TO 5.0V, 2.3GHz TO 2.7GHz LINEAR POWER AMPLIF

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www.DataSheet4U.com FEATURES n n n n n n n n n LT5570 Fast Responding, 40MHz to 2.7GHz Mean-Squared Power Detector DESCRIPTION The LT®5570 is a 40MH

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www.DataSheet4U.com LTC5530 Precision 300MHz to 7GHz RF Detector with Shutdown and Gain Adjustment FEATURES s s s s s s s s s DESCRIPTIO Temperatu

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DATA SHEET www.onsemi.com 2.5 V / 3.3 V 7 GHz / 10 Gbps Differential 1:4 LVPECL Fanout Buffer Multi−Level Inputs with Internal Termination NB7L14 Des

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Preliminary Product Description Sirenza Microdevices’ SZM-2166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed

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RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features  P1dB=33.5dBm at 5V, 2.4GHz  802

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SZA-2044(Z) 700MHz to 2.7GHz 5V 1W Power Amplifier SZA-2044(Z) 700MHz to 2.7GHz 5V 1W Power Amplifier Package: QFN, 4mm x 4mm Product Description

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5021D-B13 7 GHz, 35 µs Max External Fiber Delay Line System „ „ „„ „ „ „ „ „ „ DATASHEET | NOVEMBER 2013 MICROWAVE Applications „ Radar Testing

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TENTATIVE TD7626F,TD7626FN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD7626F,TD7626FN 2.7GHz FREQUENCY SYNTHESIZER FOR SATELLITE

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Excelics • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46d

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RFFC2071 RFFC2071/2072 2.7GHz RF SYNTHESIZER/VCO WITH INTEGRATED RF MIXER Package: QFN, 32-Pin, 5mm x 5mm RFFC2072 Features  85MHz to 2700MHz LO Fr

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RFFC2071 RFFC2071/2072 2.7GHz RF SYNTHESIZER/VCO WITH INTEGRATED RF MIXER Package: QFN, 32-Pin, 5mm x 5mm RFFC2072 Features  85MHz to 2700MHz LO Fr

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RFFC2071A/2A 2.7GHz RF SYNTHESIZER/VCO WITH INTEGRATED RF MIXER Package: QFN, 32-Pin, 5mm x 5mm RFFC2071A RFFC2072A Features  85MHz to 2700MHz LO

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HFA3661 TM P RE L I M I NA R Y Data Sheet February 1999 File Number 4240.2 2.0GHz to 2.7GHz DownConverter [ /Title (HFA3 661) /Subject (2.0G Hz

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HFA3664 TM Data Sheet April 1999 File Number 4242.3 2.7GHz UpConverter with Gain Control The HFA3664 UpConverter with Gain Control is a monolithi

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DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors NPN 7GHz wideband tran

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