7P20 Datasheet | Specifications & PDF Download

SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for use as a load switch. FEATURES VDSS=-20V, ID=-3.7A Drain to Source on-state

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FUJITSU SEMICONDUCTOR HARDWARE MANUAL MB87J2120 & MB87P2020 -A Lavender & Jasmine Colour LCD/CRT/TV Controller Specification Fujitsu Microelectronic

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TOSHIBA TLCS-47E Series CMOS 4-bit Microcontroller TMP47C101P, TMP47C201P, TMP47C101M, TMP47C201M TMP47C101/201 The 47C101/201 are high speed and high

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FQD7P20 — P-Channel QFET® MOSFET FQD7P20 P-Channel QFET® MOSFET -200 V, -5.7 A, 690 mΩ November 2013 Description This P-Channel enhancement mode po

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DATA SHEET MOS INTEGRATED CIRCUIT µPD17P203A, 17P204 4-BIT SINGLE-CHIP MICROCONTROLLER WITH STATIC RAM AND 3-CHANNEL TIMER FOR INFRARED REMOTE CONTR

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MOSFET – P-Channel, QFET -200 V, -5.7 A, 690 mW FQD7P20 Description This P−Channel enhancement mode power MOSFET is produced using onsemi’s propriet

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WSF7P20 P-Ch MOSFET General Description The WSF7P20 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(on), low gate

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® BYW77P/PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SUR

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FUJITSU SEMICONDUCTOR HARDWARE MANUAL MB87J2120 & MB87P2020 -A Lavender & Jasmine Colour LCD/CRT/TV Controller Specification Fujitsu Microelectronic

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Product status link ESDA17P20-1F2 ESDA17P20-1F2 Datasheet 15 V, 25 A unidirectional TVS in 0402 CSP Features • Peak pulse power: 600 W (8/20 µs) • St

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DATA SHEET MOS INTEGRATED CIRCUIT µPD17P203A, 17P204 4-BIT SINGLE-CHIP MICROCONTROLLER WITH STATIC RAM AND 3-CHANNEL TIMER FOR INFRARED REMOTE CONTR

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Data Sheet, Rev. 2 July 2001 Wavelength-Selected High-Power D2587P-Type (with Wavelength Locker)/D2547P-Type Isolated DFB Laser Modules Applications

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w w .D w t a S a e h t e U 4 .c m o www.DataSheet4U.com www.DataSheet4U.com

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AUMOV® Varistor Series Metal-Oxide Varistors (MOVs) Radial Leaded Varistors > AUMOV® Varistor Series RoHS Phenolic Coated Silicone Coated Agency

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isc P-Channel MOSFET Transistor FEATURES ·Drain Current –ID= -5.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= -200V(Min) ·Static Drain-Source On-Resistan

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UNISONIC TECHNOLOGIES CO., LTD UF07P20 Preliminary -0.7A, -200V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF07P20 is a P-channel power MOSFET u

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