8.0M12 Datasheet | Specifications & PDF Download

WAS530M12BM3, 5 WAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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CAS350M12BM3, 5 CAS350M12BM3T 1200 V, 350 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra Low

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8.0M Series Transient Voltage Suppressors family DO-218 Features ‧High current capability ‧Low Forward Voltage Drop ‧Low reverse current ‧Low therma

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8.0M Series Transient Voltage Suppressors family DO-218 Features ‧High current capability ‧Low Forward Voltage Drop ‧Low reverse current ‧Low therma

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D V+ G1 K1 Mid CAB530M12BM3, C CAB530M12BM3T 1200 V, 530 A All-Silicon Carbide, Half-Bridge Module Technical Features • Industry Standard 62 mm

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CAS530M12BM3, 5 CAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra Low

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WAS350M12BM3, 5 WAS350M12BM3T 1200 V, 350 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

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HAS530M12BM3, 5 HAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Housin

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

(58 views)

CAS530M12BM3, 5 CAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra Low

(33 views)

HAS530M12BM3, 5 HAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Housin

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

(29 views)

CAS300M12BM2 1.2kV, 4.2 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-RecTM Diode VDS 1.2 kV Esw, Total @ 300A 12 mJ RDS(on)

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WAS350M12BM3, 5 WAS350M12BM3T 1200 V, 350 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

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M1F80M12W2-1LA Datasheet Automotive‑grade ACEPACK DMT‑32 power module, fourpack topology, 1200 V, 78 mΩ typ. SiC Power MOSFET with NTC 17 Features

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TL750Mxx-Q1, TL751Mxx-Q1 www.ti.com SGLS312J – SEPTEMBER 2005 – REVISED JUNE 2011 AUTOMOTIVE LOW-DROPOUT VOLTAGE REGULATORS Check for Samples: TL750

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CAS350M12BM3, 5 CAS350M12BM3T 1200 V, 350 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • Ultra Low

(22 views)

WAS530M12BM3, 5 WAS530M12BM3T 1200 V, 530 A, Silicon Carbide, Half-Bridge Module D Technical Features • Industry Standard 62 mm Footprint • High H

(22 views)

WAB300M12BM3 1200 V, 300 A All-Silicon Carbide THB-80 Qualified, Switching Optimized, Half-Bridge Module Technical Features VDS IDS 1200 V 300 A

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