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CAS530M12BM3 - Half-Bridge Module
CAS530M12BM3 5 1200 V, 530 A, Silicon Carbide, Half-Bridge Module VDS IDS4 1200 V 3 530 A 2 D Technical Features • Industry Standard 62 mm Fo.HAS350M12BM3 - Half-Bridge Module
HAS350M12BM3 5 1200 V, 350 A, Silicon Carbide, Half-Bridge Module VDS IDS4 1200 V 3 350 A 2 D Technical Features • Industry Standard 62 mm F.HAS530M12BM3 - Half-Bridge Module
HAS530M12BM3 5 1200 V, 530 A, Silicon Carbide, Half-Bridge Module VDS IDS4 1200 V 3 530 A 2 D Technical Features • Industry Standard 62 mm F.CAS120M12BM2 - 120A All-Silicon Carbide Half-Bridge Module
CAS120M12BM2 1200 V, 120 A All-Silicon Carbide High Performance, Switching Optimized, Half-Bridge Module Technical Features • Industry Standard 62 mm .CCS050M12CM2 - All-Silicon Carbide Six-Pack (Three Phase) Module
CCS050M12CM2 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module Z-FETTM MOSFET and Z-RecTM Diode Features VDS 1.2 kV RDS(on) (TJ = 25˚C) .FU-68PDF-510M12B - 1.55 um DFB-LD MODULE
MITSUBISHI (OPTICAL DEVICES) FU-68PDF-V510MxxB 1.55 mm DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED, BIAS CIRCUIT I.XR20M1280 - I2C/SPI UART
XR20M1280 I2C/SPI UART WITH 128-BYTE FIFO AND INTEGRATED LEVEL SHIFTERS MAY 2011 REV. 1.0.0 GENERAL DESCRIPTION The XR20M12801 (M1280) is a single-.STPS30M120S - Power Schottky rectifier
STPS30M120S Power Schottky rectifier Features ■ High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation Des.V20M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V20M120C, VI20M120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF .VI20M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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www.vishay.com V20M120M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 5 A T.V30M120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V30M120CxM3, VI30M120CxM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V .V30M120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V30M120CxM3, VI30M120CxM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V .VI30M120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V30M120CxM3, VI30M120CxM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V .VI30M120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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www.vishay.com V30M120M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A T.V30M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V30M120C, VI30M120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF .VI30M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V30M120C, VI30M120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF .V60M120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V60M120C-M3, V60M120CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V a.V60M120CHM3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V60M120C-M3, V60M120CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V a.