80N30 Datasheet | Specifications & PDF Download

RM80N30LD N-Channel Enhancement Mode Power MOSFET Description The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) w

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AP80N30W RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ High Speed Switching G S D N-CHA

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Advanced Power Electronics Corp. AP80N30W-HF-3 N-channel Enhancement-mode Power MOSFET Low On-Resistance Simple Drive Requirement Fast Switching Cha

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High Voltage Power Supply - 250W Series HVP Series The HVP series provide 250 watts of output power up to 125kV. The outputs are fully www.DataSheet4U

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Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK80N30L2 IXTX80N30L2 D O DD RG

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Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTK80N30L2 IXTX80N30L2 D O DD RG

Rating: 1 ★ (3 votes)

RM80N30LD N-Channel Enhancement Mode Power MOSFET Description The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) w

Rating: 1 ★ (2 votes)

www.DataSheet4U.com FGA180N30D 300V PDP IGBT June 2006 FGA180N30D 300V PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sa

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