80N30 Datasheet, mosfet equivalent, Rectron

80N30 Features

• Mosfet ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ƽ High density cell design for ultra low Rdson ƽ Fully characterized avalanche voltage and current ƽ Good stability a

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80N30

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Rectron

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide

80N30 Application

• Applications General Features ƽ VDS =30V,ID =80A RDS(ON) <6.5mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=5V ƽ High density cell design for ultra low Rdson ƽ

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80N30

Rectron

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