80N06G
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N-channel mosfet.
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80N06 - N-Channel MOSFET
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
80N06
·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fa.
80N06 - 60V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
80N06
Preliminary
80A, 60V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 80N06 is an N-channel MOSFET using UTC adva.
80N02 - Power MOSFET
(ON Semiconductor)
NTD80N02 Power MOSFET
24 V, 80 A, N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power m.
80N03 - MOSFET
(GFD)
GOFORD
DESCRIPTION
The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide.
80N03L - SPB80N03L
(Siemens)
SPP80N03L SIPMOS® Power Transistor
Features • N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Cont.
80N055 - NP80N055
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION These produ.
80N07 - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
80N07
Preliminary
80A, 70V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 80N07 is an N-channel MOSFET using UTC adva.
80N08 - N-CHANNEL MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 80N08
80A, 80V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 80N08 is an N-channel MOSFET using UTC advanced technology..
80N08A - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage
: VDSS= 80V(Min) ·Static Drain-Source On-Resistance
:.
80N10 - Power MOSFETs
(IXYS)
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N10 IXFT 80N10
VDSS = 100 V ID25 = 80 .
