Datasheet Details
- Part number
- 80N03
- Manufacturer
- GFD
- File Size
- 2.17 MB
- Datasheet
- 80N03-GFD.pdf
- Description
- MOSFET
80N03 Description
GOFORD .
The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge .
80N03 Features
* VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process technology for hi
80N03 Applications
* . 80N03
VDS
RDS(ON)
ID
30V
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