80N03 Datasheet, mosfet equivalent, GFD

80N03 Features

• Mosfet � VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High density cell design for ultra low Rdson � Fully characterized Avalanche voltage and current � Good stabilty and unifomity with

PDF File Details

Part number:

80N03

Manufacturer:

GFD

File Size:

2.17MB

Download:

📄 Datasheet

Description:

Mosfet. The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide V

80N03 Application

• Applications . 80N03 VDS RDS(ON) ID 30V
• 80A GENERAL FEATURES � VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V � High density ce

TAGS

80N03

GFD

📁 Related Datasheet

80N02 - Power MOSFET (ON Semiconductor)
NTD80N02 Power MOSFET 24 V, 80 A, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power m.

80N03L - SPB80N03L (Siemens)
SPP80N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Cont.

80N055 - NP80N055 (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These produ.

80N06 - N-Channel MOSFET (Inchange Semiconductor)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 80N06 ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fa.

80N06 - 60V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 80N06 Preliminary 80A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N06 is an N-channel MOSFET using UTC adva.

80N06G - N-CHANNEL MOSFET (ALLPOWER)
.

80N07 - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 80N07 Preliminary 80A, 70V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N07 is an N-channel MOSFET using UTC adva.

80N08 - N-CHANNEL MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 80N08 80A, 80V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology..

80N08A - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current: ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance :.

80N10 - Power MOSFETs (IXYS)
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80 .