80N03 - MOSFET
80N03 Features
* VDS = 30 V, ID = 80 A RDS(ON) < 6 mΩ @ VGS = 10 V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and current
* Good stabilty and unifomity with high EAS
* Excellent package for good heat dissipation
* Special process technology for hi
