8K.64K Datasheet | Specifications & PDF Download

Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –

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Features • Single 2.7V to 3.6V Supply • Hardware and Software Data Protection • Low Power Dissipation – 15mA Active Current – 20µA CMOS Standby Curren

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INTEGRATED CIRCUITS 8XC54/58 8XC51FA/FB/FC/80C51FA 8XC51RA+/RB+/RC+/RD+/80C51RA + 80C51 8-bit microcontroller family 8K–64K/256–1K OTP/ROM/ROMless, l

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MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin • • • • • out) 128K x 8 or 64K x 16 org

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs • Self-timed Byte Write Cycle – Internal Address and Data Latches – Internal Cont

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MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast ac

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AT28LV64B Features • • • • • • • • • • • Single 3.3V ± 10% Supply 3-Volt-Only Read and Write Operation Software-Protected Programming Low Power Diss

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MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast ac

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CY7C4281 CY7C4291 64K/128K x 9 Deep Sync FIFOs Features • High-speed, low-power, first-in first-out (FIFO) memories • 64K × 9 (CY7C4281) • 128K × 9

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LH5164A/AH FEATURES • 8,192 × 8 bit organization • Access times: 80/100 ns (MAX.) • Low-power consumption: Operating: 303 mW (MAX.) LH5164A/D/N @ 80 n

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LH5164AV FEATURES • 8,192 × 8 bit organization • Access time: 200 ns (MAX.) • Supply current (MAX.): Operating: 248 mW 55 mW (tRC, tWC = 1 µs) Standby

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00012-5v0-E 64 K (8 K × 8) Bit SPI MB85RS64 ■ DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Rand

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www.DataSheet4U.com PRELIMINARY CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RA

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www.DataSheet4U.com PRELIMINARY CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RA

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LH5164ASH FEATURES • 8,192 × 8 bit organization • Access time: 500 ns (MAX.) • Power consumption: Operating: 60 mW (MAX.) @ 3 V Standby: 3 µW (MAX.) @

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MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin • • • • • out) 128K x 8 or 64K x 16 org

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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PRELIMINARY CYD04S72V CYD09S72V CYD18S72V FLEx72™ 3.3V 64K/128K/256K x 72 Synchronous Dual-Port RAM Features • True dual-ported memory cells that al

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