8K.64K Datasheet | Specifications & PDF Download

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MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin • • • • • out) 128K x 8 or 64K x 16 org

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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25/0251 CY7C008/009 CY7C018/019 Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 64K x 8 organ

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CY7C0837AV, CY7C0830AV CY7C0831AV, CY7C0832AV CY7C0832BV, CY7C0833AV FLEx18™ 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM Features

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INTEGRATED CIRCUITS 8XC52/54/58/80C32 8XC51FA/FB/FC/80C51FA 8XC51RA+/RB+/RC+/RD+/80C51RA + 80C51 8-bit microcontroller family 8K–64K/256–1K OTP/ROM/R

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Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle – Internal Address and Data Latches – Inter

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00012-5v0-E 64 K (8 K × 8) Bit SPI MB85RS64 ■ DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Rand

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® Integrated Device Technology, Inc. 128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE DESCRIPTION: IDT7M1001 IDT7M1003 FEATURES • High-density 1M

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27LV64 64K (8K x 8) Low-Voltage CMOS EPROM FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance - 200 ns access time available at 3.0V

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INTEGRATED CIRCUITS 8XC52/54/58/80C32 8XC51FA/FB/FC/80C51FA 8XC51RA+/RB+/RC+/RD+/80C51RA + 80C51 8-bit microcontroller family 8K–64K/256–1K OTP/ROM/R

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Features • 2.7V to 3.6V Supply – Full Read and Write Operation • Low Power Dissipation – 8 mA Active Current – 50 µA CMOS Standby Current • Read Acces

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Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times –

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60A CY7C460A/CY7C462A CY7C464A/CY7C466A Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs Features • High-speed, low-power, first-in first-out (FIFO)

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Features • Utilizes the AVR® Enhanced RISC Architecture • 121 Powerful Instructions - Most Single Clock Cycle Execution • 128K bytes of In-System Repr

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M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

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