9.55 Datasheet | Specifications & PDF Download

IP5513 TWS Bluetooth Earphone Charging Box SOC integrated with MCU 1. Features  Flexible and low-cost customized program  Package: SOP16  Disch

(234 views)

LM555/NE555/SA555 Single Timer www.fairchildsemi.com Features • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stabilit

(192 views)

CRE6559 FREQ SHUFFLING CRE6559 combines a dedicated current mode PWM controller with a high voltage power MOSFET. It is optimized for high performanc

(135 views)

LD5537 09/07/2015 Green-Mode PWM Controller with Variable Frequency and Brown IN/OUT Protections REV. 01 General Description The LD5537 is built with

(130 views)

(127 views)

F4558 F4558 、 F4558 F1458 ，。 · · · （） DIP、CSOP TO-8 、 （1/2） 132#（741000） 0938-8285884（T）8224113（F） 1 32（741000） 0938-8285884（T）8

(118 views)

INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

(103 views)

NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

(89 views)

NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared

(88 views)

NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared to

(86 views)

STH90N55F4-2 N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STH90N55F4-2 55 V < 0.008

(82 views)

770 series Ø45 mm 21-114 W MODEL NO. DESIGNATIONS MOTOR DATA Part name Diameter (mm) Lenth (mm) Nominal voltage (V) Nominal speed (rpm) Nominal torq

(78 views)

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community NA555, NE555, SA555, SE555 SLFS022I – SEPTEMBER 1973 – REVIS

(78 views)

AON6554 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Char

(77 views)

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

(77 views)

Silicon Epitaxial Planar Transistor EATURES  Collector Current.(IC= 1.5A）  Complementary To SS8050. Pb Lead-free  Collector Dissipation: PC=0.3W

(76 views)

Product Folder Order Now Technical Documents Tools & Software Support & Community TPA3255 SLASEA8A – FEBRUARY 2016 – REVISED OCTOBER 2016 TPA3255

(73 views)

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

(73 views)

NJM4558 DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM4558 is a dual high-gain operational amplifier with internal compensation circuit an

(72 views)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

(71 views)