900A Datasheet | Specifications & PDF Download

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• 12.8 VOLT NOMINAL ZENER VOLTAGE + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTIO

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AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO4900A uses advanced trench technology to

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SPECIFICATION OF FBM□-_ _ _ _A□□ SERIES APPLICATIONS 1. EMI suppression for various electric equipment by the addition of impedance to the circuit. 2.

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isc Silicon PNP Darlington Power Transistor BD900A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain : h

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Replaces DS6033-2 DCR5900A22 Phase Control Thyristor DS6033-3 October 2019 (LN39271) FEATURES  Double Side Cooling  High Surge Capability APP

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1N4896(A)-1N4915(A) High-reliability discrete products and engineering services since 1977 TEMPERATURE COMPENSATED ZENER DIODES FEATURES  Availabl

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BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Designed for

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SPECIFICATION OF FBM□-10 SERIES APPLICATIONS 1. EMI suppression for various electric equipment by the addition of impedance to the circuit. 2. It is p

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IP120A IP120 IP7900A IP7900 LM120 SERIES SERIES SERIES SERIES SERIES 1 1 2 2 1.5 AMP NEGATIVE VOLTAGE REGULATOR 3 3 Pin 1 – Ground Pin 2 – VOUT

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5mm Ultr a Bright LED Ultra MT900A-UR Applica tions pplications Fea tur es eatur tures • High Luminous Intensity • Narrow Beam Angle • Optical Sensor

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www.vishay.com Si7900AEDN Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET, Common Drain PowerPAK® 1212-8 D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm

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a Hardware Design SIM900A_HD_V1.01 SIM900 Hardware Design Document Title: Version: Date: Status: Document Control ID: SIM900A Hardware Design 1.01

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SPECIFICATION OF FBM□-_ _ _ _A□□ SERIES APPLICATIONS 1. EMI suppression for various electric equipment by the addition of impedance to the circuit. 2.

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