90ns Datasheet | Specifications & PDF Download

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CTL190NS10-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 100V  Drain-Source On-Resistance RDS(ON) 65m, at VGS= 10

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m o .c U 4 t e e h S a t a .D w w w Datasheet January 2005 Intel® Pentium® M Processor on 90 nm Process with 2-MB L2 Cache m o .c U 4 t e e h S a at

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SM2690NSC ® N-Channel Enhancement Mode MOSFET Features • 150V/1.6A, RDS(ON)= 360mΩ(max.) @ VGS=10V • Reliable and Rugged • Lead Free and Green Devic

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Analog Power AM7390NS N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typic

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SM2290NSQG Features · 150V/1.6A, RDS(ON) = 360mW(max.) @ VGS =10V · ESD Protection · 100% UIS Tested · Reliable and Rugged · Lead Free and Green Devic

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