CTL190NS10-T52 N-Channel MOSFET

CT Micro

Description

CTL190NS10-T52 N-Channel Enhancement MOSFET .
The CTL190NS10-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: CTL190NS10-T52
Manufacturer: CT Micro
File Size: 1.03 MB
Datasheet: CTL190NS10-T52-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 100V
* Drain-Source On-Resistance RDS(ON) 65m, at VGS= 10V, ID= 12A RDS(ON) 75m, at VGS= 5V, ID= 12A
* Continuous Drain Current at TC=25℃ID =19A
* Advanced high cell density Trench Technology

Applications

* DC/DC Converter
* Load Switch
* LCD Display inverter Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL190NS10-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS

CTL190NS10-T52 Distributors

📁 Related Datasheet

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CTL190NS10-T52 N-Channel MOSFET CT Micro

CT Micro CTL190NS10-T52-like datasheet