Datasheet Details
Part number:
CTL190NS10-T52
Manufacturer:
CT Micro
File Size:
1.03 MB
Description:
N-Channel MOSFET
CTL190NS10-T52 N-Channel Enhancement MOSFET Features * Drain-Source Breakdown Voltage VDSS 100V * Drain-Source On-Resistance RDS(ON) 65m, at VGS= 10V, ID= 12A RDS(ON) 75m, at VGS= 5V, ID= 12A * Continuous Drain Current at TC=25℃ID =19A * Advanced high cell density Trench Technolog
CTL190NS10-T52, N-Channel MOSFET
The CTL190NS10-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application.
CTL190NS10-T52 Distributor
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