CTL0036NS-R3 N-Channel MOSFET

CT Micro

Description

CTL0036NS-R3 N-Channel Enhancement MOSFET .
The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: CTL0036NS-R3
Manufacturer: CT Micro
File Size: 457.51 KB
Datasheet: CTL0036NS-R3-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 60 V
* Drain-Source On-Resistance RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200mA ℃
* Continuous Drain Current at TA=25 , ID = 300mA
* Advanced high cell density Trench Technology
* RoHS Complia

Applications

* Cellular phone
* Notebook

CTL0036NS-R3 Distributors

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CTL0036NS-R3 N-Channel MOSFET CT Micro

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