CTL0036NS-R3 Datasheet - CT Micro

CTL0036NS-R3 N-Channel MOSFET

The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Schematic Drain Drain Gate Source Gate Source CT Micro Propri.

CTL0036NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 60 V

* Drain-Source On-Resistance RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200mA ℃

* Continuous Drain Current at TA=25 , ID = 300mA

* Advanced high cell density Trench Technology

* RoHS Complia

CTL0036NS-R3-CTMicro.pdf