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CTL0036NS-R3 - N-Channel MOSFET

CT Micro

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Datasheet Details

Part number	CTL0036NS-R3
Manufacturer	CT Micro
File Size	457.51 KB
Description	N-Channel MOSFET
Datasheet	CTL0036NS-R3-CTMicro.pdf

CTL0036NS-R3 Product details

Description

The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

Drain-Source Breakdown Voltage VDSS 60 V.
Drain-Source On-Resistance RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200mA ℃.
Continuous Drain Current at TA=25 , ID = 300mA.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.
ESD protection 1.5KV.

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Published: May 20, 2020 |