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CTL0036NS-R3 Datasheet - CT Micro

CTL0036NS-R3 - N-Channel MOSFET

The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Schematic Drain Drain Gate Source Gate Source CT Micro Propri

CTL0036NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 60 V

* Drain-Source On-Resistance RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200mA ℃

* Continuous Drain Current at TA=25 , ID = 300mA

* Advanced high cell density Trench Technology

* RoHS Complia

CTL0036NS-R3-CTMicro.pdf

Preview of CTL0036NS-R3 PDF
CTL0036NS-R3 Datasheet Preview Page 2 CTL0036NS-R3 Datasheet Preview Page 3

Datasheet Details

Part number:

CTL0036NS-R3

Manufacturer:

CT Micro

File Size:

457.51 KB

Description:

N-channel mosfet.

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