Datasheet4U Logo Datasheet4U.com

CTL0036NS-R3

N-Channel MOSFET

CTL0036NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 60 V

* Drain-Source On-Resistance RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200mA ℃

* Continuous Drain Current at TA=25 , ID = 300mA

* Advanced high cell density Trench Technology

* RoHS Complia

CTL0036NS-R3 General Description

The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Schematic Drain Drain Gate Source Gate Source CT Micro Propri.

CTL0036NS-R3 Datasheet (457.51 KB)

Preview of CTL0036NS-R3 PDF

Datasheet Details

Part number:

CTL0036NS-R3

Manufacturer:

CT Micro

File Size:

457.51 KB

Description:

N-channel mosfet.

📁 Related Datasheet

CTL0035NS-R3 N-Channel MOSFET (CT Micro)

CTL0015PS-R3 P-Channel MOSFET (CT Micro)

CTL0025NS-R3 N-Channel MOSFET (CT Micro)

CTL005 AVERAGE RESPONDING AC CURRENT TRANSDUCERS (Red Lion)

CTL015NS10-R3 N-Channel MOSFET (CT Micro)

CTL0196PS-R3 P-Channel MOSFET (CT Micro)

CTL0203PS-R3 P-Channel MOSFET (CT Micro)

CTL0212PS-R3 P-Channel MOSFET (CT Micro)

CTL0262PS-R3 P-Channel MOSFET (CT Micro)

CTL0266NS-R3 N-Channel MOSFET (CT Micro)

TAGS

CTL0036NS-R3 N-Channel MOSFET CT Micro

Image Gallery

CTL0036NS-R3 Datasheet Preview Page 2 CTL0036NS-R3 Datasheet Preview Page 3

CTL0036NS-R3 Distributor