Part number:
CTL0036NS-R3
Manufacturer:
CT Micro
File Size:
457.51 KB
Description:
N-channel mosfet.
Datasheet Details
The CTL0036NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Schematic Drain Drain Gate Source Gate Source CT Micro Propri
CTL0036NS-R3 Features
* Drain-Source Breakdown Voltage VDSS 60 V
* Drain-Source On-Resistance RDS(ON) 3.0Ω, at VGS= 10V, IDS= 500mA RDS(ON) 4.0Ω, at VGS= 4.5V, IDS= 200mA ℃
* Continuous Drain Current at TA=25 , ID = 300mA
* Advanced high cell density Trench Technology
* RoHS Complia
Datasheet Details
CTL0036NS-R3
CT Micro
457.51 KB
N-channel mosfet.
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