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CTL0025NS-R3

N-Channel MOSFET

CTL0025NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 50 V

* Drain-Source On-Resistance RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VGS= 2.5V, ID= 0.2A ℃

* Continuous Drain Current at TA=25 ID = 0.2A

* Advanced high cell density Trench Techn

CTL0025NS-R3 General Description

The CTL0025NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Package Outline Schematic Drain Drain Gate Source Gate Sourc.

CTL0025NS-R3 Datasheet (735.27 KB)

Preview of CTL0025NS-R3 PDF

Datasheet Details

Part number:

CTL0025NS-R3

Manufacturer:

CT Micro

File Size:

735.27 KB

Description:

N-channel mosfet.

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TAGS

CTL0025NS-R3 N-Channel MOSFET CT Micro

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