Description
CTL0015PS-R3 P-Channel Enhancement MOSFET .
The CTL0015PS-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronou.
Features
* Drain-Source Breakdown Voltage VDSS -50 V
* Drain-Source On-Resistance
RDS(ON) 5, at VGS= -5.0V, ID= -0.1A
* Continuous Drain Current at TC=25℃ID = -0.13A
* Advanced high cell density Trench Technology
Applications
* Applications
* DC to DC Converter
* Load switching
* Battery
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 1 Nov, 2013
CTL0015PS-R3 P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters