CTL015NS10-R3 Datasheet - CT Micro

CTL015NS10-R3 N-Channel MOSFET

The CTL015NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications * Power Management * LCD Display inve.

CTL015NS10-R3 Features

* Drain-Source Breakdown Voltage VDSS 105 V

* Drain-Source On-Resistance RDS(ON) 230mΩ, at VGS= 10V, ID= 1.5A RDS(ON) 275mΩ, at VGS= 4.5V, ID= 1.0A ℃

* Continuous Drain Current at TA=25 ID =1.5A

* Advanced high cell density Trench Technology

* RoHS Compliance &

CTL015NS10-R3-CTMicro.pdf