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CTL015NS10-R3 Datasheet - CT Micro

N-Channel MOSFET

CTL015NS10-R3 Features

* Drain-Source Breakdown Voltage VDSS 105 V

* Drain-Source On-Resistance RDS(ON) 230mΩ, at VGS= 10V, ID= 1.5A RDS(ON) 275mΩ, at VGS= 4.5V, ID= 1.0A ℃

* Continuous Drain Current at TA=25 ID =1.5A

* Advanced high cell density Trench Technology

* RoHS Compliance &

CTL015NS10-R3 General Description

The CTL015NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications * Power Management * LCD Display inve.

CTL015NS10-R3 Datasheet (532.95 KB)

Preview of CTL015NS10-R3 PDF

Datasheet Details

Part number:

CTL015NS10-R3

Manufacturer:

CT Micro

File Size:

532.95 KB

Description:

N-channel mosfet.

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TAGS

CTL015NS10-R3 N-Channel MOSFET CT Micro

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