Datasheet4U Logo Datasheet4U.com

CTL0196PS-R3

P-Channel MOSFET

CTL0196PS-R3 Features

* Drain-Source Breakdown Voltage VDSS -60 V

* Drain-Source On-Resistance RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A ℃

* Continuous Drain Current at TC=25 ID = -1.9A

* Advanced high cell density Trench Technology

* RoHS Compli

CTL0196PS-R3 General Description

The CTL0196PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications

* Power Management

* Battery Powered Sy.

CTL0196PS-R3 Datasheet (763.35 KB)

Preview of CTL0196PS-R3 PDF

Datasheet Details

Part number:

CTL0196PS-R3

Manufacturer:

CT Micro

File Size:

763.35 KB

Description:

P-channel mosfet.

📁 Related Datasheet

CTL015NS10-R3 N-Channel MOSFET (CT Micro)

CTL0015PS-R3 P-Channel MOSFET (CT Micro)

CTL0025NS-R3 N-Channel MOSFET (CT Micro)

CTL0035NS-R3 N-Channel MOSFET (CT Micro)

CTL0036NS-R3 N-Channel MOSFET (CT Micro)

CTL005 AVERAGE RESPONDING AC CURRENT TRANSDUCERS (Red Lion)

CTL0203PS-R3 P-Channel MOSFET (CT Micro)

CTL0212PS-R3 P-Channel MOSFET (CT Micro)

CTL0262PS-R3 P-Channel MOSFET (CT Micro)

CTL0266NS-R3 N-Channel MOSFET (CT Micro)

TAGS

CTL0196PS-R3 P-Channel MOSFET CT Micro

Image Gallery

CTL0196PS-R3 Datasheet Preview Page 2 CTL0196PS-R3 Datasheet Preview Page 3

CTL0196PS-R3 Distributor