CTL0196PS-R3 Datasheet - CT Micro

CTL0196PS-R3 P-Channel MOSFET

The CTL0196PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications * Power Management * Battery Powered Sy.

CTL0196PS-R3 Features

* Drain-Source Breakdown Voltage VDSS -60 V

* Drain-Source On-Resistance RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A ℃

* Continuous Drain Current at TC=25 ID = -1.9A

* Advanced high cell density Trench Technology

* RoHS Compli

CTL0196PS-R3-CTMicro.pdf