CTL0196PS-R3 P-Channel MOSFET

CT Micro

Description

CTL0196PS-R3 P-Channel Enhancement MOSFET .
The CTL0196PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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CTL0196PS-R3 Datasheet Preview — Preview of CTL0196PS-R3 PDF

Datasheet Specifications

Part number: CTL0196PS-R3
Manufacturer: CT Micro
File Size: 763.35 KB
Datasheet: CTL0196PS-R3-CTMicro.pdf
Description: P-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS -60 V
* Drain-Source On-Resistance RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A ℃
* Continuous Drain Current at TC=25 ID = -1.9A
* Advanced high cell density Trench Technology
* RoHS Compli

Applications

* Power Management
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL0196PS-R3 P

CTL0196PS-R3 Distributors

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CTL0196PS-R3 P-Channel MOSFET CT Micro

CT Micro CTL0196PS-R3-like datasheet