CTL0203PS-R3 Datasheet - CT Micro

CTL0203PS-R3 P-Channel MOSFET

The CTL0203PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application su.

CTL0203PS-R3 Features

* Drain-Source Breakdown Voltage VDSS -30 V

* Drain-Source On-Resistance RDS(ON) 160mΩ, at VGS= -4.5V, ID= -1.6A RDS(ON) 110mΩ, at VGS= -10V, ID= -2.0A ℃

* Continuous Drain Current at TA=25 ID = -2.0A

* Advanced high cell density Trench Technology

* RoHS Compli

CTL0203PS-R3-CTMicro.pdf