Description
CTL0203PS-R3 P-Channel Enhancement MOSFET .
The CTL0203PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Features
* Drain-Source Breakdown Voltage VDSS -30 V
* Drain-Source On-Resistance
RDS(ON) 160mΩ, at VGS= -4.5V, ID= -1.6A RDS(ON) 110mΩ, at VGS= -10V, ID= -2.0A
℃
* Continuous Drain Current at TA=25 ID = -2.0A
* Advanced high cell density Trench Technology
* RoHS Compli
Applications
* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 2 Jun, 2015
CTL0203PS-R3 P-Channel Enhancement MOSFET
Absolute Maxi