CTL0262PS-R3 Datasheet - CT Micro

CTL0262PS-R3 P-Channel MOSFET

The CTL0262PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application su.

CTL0262PS-R3 Features

* Drain-Source Breakdown Voltage VDSS -20 V

* Drain-Source On-Resistance RDS(ON) 76m, at VGS= -4.5V, ID= -3.4A RDS(ON) 97m, at VGS= -2.5V, ID= -2.4A RDS(ON) 140m, at VGS= -1.8V, ID= -1.7A

* Continuous Drain Current at TC=25℃ID = -3.4A

* Advanced high cell density Trench Technology

CTL0262PS-R3-CTMicro.pdf