Description
CTL0262PS-R3 P-Channel Enhancement MOSFET .
The CTL0262PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Features
* Drain-Source Breakdown Voltage VDSS -20 V
* Drain-Source On-Resistance
RDS(ON) 76m, at VGS= -4.5V, ID= -3.4A RDS(ON) 97m, at VGS= -2.5V, ID= -2.4A RDS(ON) 140m, at VGS= -1.8V, ID= -1.7A
* Continuous Drain Current at TC=25℃ID = -3.4A
* Advanced high cell density Trench Technology
Applications
* Power Management
* Lithium Ion Battery
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 1 Nov, 2013
CTL0262PS-R3 P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
