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CTL0262PS-R3 P-Channel MOSFET

CTL0262PS-R3 Description

CTL0262PS-R3 P-Channel Enhancement MOSFET .
The CTL0262PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

CTL0262PS-R3 Features

* Drain-Source Breakdown Voltage VDSS -20 V
* Drain-Source On-Resistance RDS(ON) 76m, at VGS= -4.5V, ID= -3.4A RDS(ON) 97m, at VGS= -2.5V, ID= -2.4A RDS(ON) 140m, at VGS= -1.8V, ID= -1.7A
* Continuous Drain Current at TC=25℃ID = -3.4A
* Advanced high cell density Trench Technology

CTL0262PS-R3 Applications

* Power Management
* Lithium Ion Battery Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Nov, 2013 CTL0262PS-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage

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Datasheet Details

Part number
CTL0262PS-R3
Manufacturer
CT Micro
File Size
907.25 KB
Datasheet
CTL0262PS-R3-CTMicro.pdf
Description
P-Channel MOSFET

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