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CTL0266NS-R3

N-Channel MOSFET

CTL0266NS-R3 Features

* Drain-Source Breakdown Voltage VDSS -20 V

* Drain-Source On-Resistance RDS(ON) 82m, at VGS= 10V, ID= 2.6A RDS(ON) 96m, at VGS= 4.5V, ID= 2.1A

* Continuous Drain Current at TC=25℃ID = 2.6A

* Advanced high cell density Trench Technology

* RoHS Compliance & Halogen Free Applicat

CTL0266NS-R3 General Description

The CTL0266NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application su.

CTL0266NS-R3 Datasheet (1.05 MB)

Preview of CTL0266NS-R3 PDF

Datasheet Details

Part number:

CTL0266NS-R3

Manufacturer:

CT Micro

File Size:

1.05 MB

Description:

N-channel mosfet.

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TAGS

CTL0266NS-R3 N-Channel MOSFET CT Micro

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