CTL0266NS-R3 N-Channel MOSFET

CT Micro

Description

CTL0266NS-R3 N-Channel Enhancement MOSFET .
The CTL0266NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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CTL0266NS-R3 Datasheet Preview — Preview of CTL0266NS-R3 PDF

Datasheet Specifications

Part number: CTL0266NS-R3
Manufacturer: CT Micro
File Size: 1.05 MB
Datasheet: CTL0266NS-R3-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS -20 V
* Drain-Source On-Resistance RDS(ON) 82m, at VGS= 10V, ID= 2.6A RDS(ON) 96m, at VGS= 4.5V, ID= 2.1A
* Continuous Drain Current at TC=25℃ID = 2.6A
* Advanced high cell density Trench Technology
* RoHS Compliance & Halogen Free Applicat

Applications

* Power Management

CTL0266NS-R3 Distributors

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CTL0266NS-R3 N-Channel MOSFET CT Micro

CT Micro CTL0266NS-R3-like datasheet