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CTL0035NS-R3 Datasheet - CT Micro

CTL0035NS-R3 - N-Channel MOSFET

The CTL0035NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Package Outline Schematic Drain Drain Gate Source Gate Sourc

CTL0035NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 50 V

* Drain-Source On-Resistance RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VGS= 2.75V, ID= 0.2A ℃

* Continuous Drain Current at TA=25 ID = 0.3A

* Advanced high cell density Trench Tech

CTL0035NS-R3-CTMicro.pdf

Preview of CTL0035NS-R3 PDF
CTL0035NS-R3 Datasheet Preview Page 2 CTL0035NS-R3 Datasheet Preview Page 3

Datasheet Details

Part number:

CTL0035NS-R3

Manufacturer:

CT Micro

File Size:

736.36 KB

Description:

N-channel mosfet.

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