CTL0035NS-R3 - N-Channel MOSFET
The CTL0035NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Package Outline Schematic Drain Drain Gate Source Gate Sourc
CTL0035NS-R3 Features
* Drain-Source Breakdown Voltage VDSS 50 V
* Drain-Source On-Resistance RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VGS= 2.75V, ID= 0.2A ℃
* Continuous Drain Current at TA=25 ID = 0.3A
* Advanced high cell density Trench Tech
