CTL0035NS-R3 N-Channel MOSFET

CT Micro

Description

CTL0035NS-R3 N-Channel Enhancement MOSFET .
The CTL0035NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: CTL0035NS-R3
Manufacturer: CT Micro
File Size: 736.36 KB
Datasheet: CTL0035NS-R3-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 50 V
* Drain-Source On-Resistance RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VGS= 2.75V, ID= 0.2A ℃
* Continuous Drain Current at TA=25 ID = 0.3A
* Advanced high cell density Trench Tech

Applications

* DC/DC Converter
* Load Switch
* LCD Display inverter

CTL0035NS-R3 Distributors

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CTL0035NS-R3 N-Channel MOSFET CT Micro

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