CTL0035NS-R3 Datasheet - CT Micro

CTL0035NS-R3 N-Channel MOSFET

The CTL0035NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Package Outline Schematic Drain Drain Gate Source Gate Sourc.

CTL0035NS-R3 Features

* Drain-Source Breakdown Voltage VDSS 50 V

* Drain-Source On-Resistance RDS(ON) 1.3Ω, at VGS= 10V, ID= 0.2A RDS(ON) 1.4Ω, at VGS= 5V, ID= 0.2A RDS(ON) 1.6Ω, at VGS= 2.75V, ID= 0.2A ℃

* Continuous Drain Current at TA=25 ID = 0.3A

* Advanced high cell density Trench Tech

CTL0035NS-R3-CTMicro.pdf