CTL1103NS N-Channel MOSFET

CT Micro

Description

CTL1103NS N-Channel Enhancement MOSFET .
The CTL1103NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous b.

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Datasheet Specifications

Part number: CTL1103NS
Manufacturer: CT Micro
File Size: 975.25 KB
Datasheet: CTL1103NS-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 30 V
* Drain-Source On-Resistance RDS(ON) 8.5m, at VGS= 10V, IDS= 5.5A RDS(ON) 12m, at VGS= 4.5V, IDS= 5.5A
* Continuous Drain Current at TC=25℃ ID = 11A
* Advanced high cell density Trench Technology
* RoHS Compliance & Halogen Free Applic

Applications

* Power Management

CTL1103NS Distributors

📁 Related Datasheet

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CTL1103NS N-Channel MOSFET CT Micro

CT Micro CTL1103NS-like datasheet