925.960 Datasheet | Specifications & PDF Download

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW916/D UHF Silicon FET Power Amplifier Designed specifically for the Eur

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW930/D UHF Silicon FET Power Amplifier Designed specifically for the Pan

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MAMXES0004 E-Series Surface Mount Mixer 925-960 MHz Features • • • • LO Power +7 dBm Up to +1 dBm RF Surface Mount Low Profile SM-125Package Note: N

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e PTB 20105 20 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20105 is a class AB, NPN, common emitter RF power transistor inte

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e PTB 20177 150 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN, common emitter RF power transistor int

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e PTB 20219 70 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor inten

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e PTB 20135 85 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20135 is a class AB, NPN, common emitter RF power transistor inte

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PTF 102027 40 Watts, 925–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications

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e PTB 20148 60 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20148 is a class AB, NPN, common emitter RF power transistor inte

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