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PTB20135 - 85 Watts/ 925-960 MHz Cellular Radio RF Power Transistor

Description

The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz.

Rated at 85 watts minimum output power, it may be used for both CW and PEP applications.

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Datasheet Details

Part number PTB20135
Manufacturer Ericsson
File Size 47.84 KB
Description 85 Watts/ 925-960 MHz Cellular Radio RF Power Transistor
Datasheet download datasheet PTB20135 Datasheet
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e PTB 20135 85 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • 26 Volt, 960 MHz Characteristics - Output Power = 85 Watts - Collector Efficiency = 50% at 85 Watts - IMD = -30 dBc Max at 60 W(PEP) Class AB Characteristics Gold Metallization Silicon Nitride Passivated • • • Typical Output Power vs.
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