PTB23006U Description
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange. 3 2 Top view MAM131 PTB23006U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon-base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 2 VCC (V) 28 PL (W) >5 Gp (dB) >9 ηC (%) >40 Zi;.
PTB23006U Key Features
- Very high power gain
- Diffused emitter ballasting resistors improve ruggedness
- Interdigitated emitter-base structure
- Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
- Multicell geometry improves power sharing and reduces thermal resistance
- Internal input prematching network
PTB23006U Applications
- SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or di