PTB23006U Datasheet (NXP Semiconductors)

Part PTB23006U
Description Microwave power transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 88.57 KB
NXP Semiconductors

PTB23006U Overview

Key Features

  • Very high power gain
  • Diffused emitter ballasting resistors improve ruggedness
  • Interdigitated emitter-base structure
  • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
  • Up to 0.2 mm from ceramic. PARA