PTB23002U - NPN microwave power transistor

Product Overview

NXP

Part number	PTB23002U
Manufacturer	NXP
File Size	73.53 KB
Description	NPN microwave power transistor
Datasheet	PTB23002U Datasheet
Additional preview pages of the PTB23002U datasheet.

NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband ampliﬁer.

Very high power gain.
Internal input prematching network.
Diffused emitter ballasting resistors improve ruggedness.
Interdigitated emitter-base structure.
Gold metallization with barrier layer to prevent electromigration and gold diffusion during life.
Multicell geometry improves power sharing and reduces thermal resistance.

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Published: Apr 16, 2005 |