PTB23002U Description
NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange. 3 2 Top view MAM131 PTB23002U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon-base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 2.3 VCC (V) 28 PL (W) >2 Gp (dB) >9 ηC (%) >45 Zi;.
PTB23002U Key Features
- Very high power gain
- Internal input prematching network
- Diffused emitter ballasting resistors improve ruggedness
- Interdigitated emitter-base structure
- Gold metallization with barrier layer to prevent electromigration and gold diffusion during life
- Multicell geometry improves power sharing and reduces thermal resistance
PTB23002U Applications
- SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di