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PTB23002U - NPN microwave power transistor

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier.

Key Features

  • Very high power gain.
  • Internal input prematching network.
  • Diffused emitter ballasting resistors improve ruggedness.
  • Interdigitated emitter-base structure.
  • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life.
  • Multicell geometry improves power sharing and reduces thermal resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and gold diffusion during life • Multicell geometry improves power sharing and reduces thermal resistance. APPLICATIONS Common-base, class C power amplifiers at frequencies up to 2.3 GHz.