PTB23003X Overview
Description
Top view 2 NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. Fig.1 Simplified outline and symbol.
Key Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- SOT440A PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION olumns 1 c b e MAM131
