9N65 Datasheet | Specifications & PDF Download

() CRJQ99N65G2F SJMOS N-MOSFET 650V, 90mΩ, 38A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency •

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DTU9N65SJ/DTP9N6SJ/DTP9N6FSJ www.din-tek.jp N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) max.

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PD - 91815C SMPS MOSFET IRFB9N65A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed P

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CYStech Electronics Corp. Spec. No. : C078E3 Issued Date : 2016.02.26 Revised Date : 2016.03.02 Page No. : 1/ 10 N-Channel Enhancement Mode Power MO

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CYStech Electronics Corp. Spec. No. : C115FP Issued Date : 2016.01.15 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN9N6

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9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Si

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PD - 95416 IRFB9N65APbF SMPS MOSFET Applications l l l l HEXFET® Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Spe

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650V N-Channel MOSFETs PDF09N65 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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CYStech Electronics Corp. Spec. No. : C078FP Issued Date : 2016.02.26 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN9N6

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MOSFET - Power, N-Channel, SUPERFET) III, FAST 650 V, 19.3 mW, 75 A NTH4LN019N65S3H Description SUPERFET III MOSFET is onsemi’s brand−new high voltage

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QM09N65F 1 2011-03-08 - 1 - N-Ch 650V Fast Switching MOSFETs General Description The QM09N65F is the highest performance N-ch MOSFETs with speci

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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MOSFET - Power, Single N-Channel, D2PAK-7L 650 V, 89 mW, 37 A NVBG089N65S3F Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage super−

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() CRJQ99N65G2 SJMOS N-MOSFET 650V, 81mΩ, 35A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency •

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Product Summary V(BR)DSS 650V RDS(ON) 1.3Ω @ VGS = 10V Package ITO-220AB ID TC = +25°C 9.0A Description This new generation complementary dual MO

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GaN Enhancement-mode Power Transistor CID9N65E3 Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance :

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OBSOLETE – PART DISCONTINUED PART OBSOLETE - Use DMG7N65SCT Green DMG9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON)

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www.vishay.com IRFB9N65A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Q

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HMS29N65/HMS29N65D/HMS29N65F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super juncti

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