A1180 – A1184 Preliminary Data Sheet PRELIMINARY.
HA118070 - Video Switch
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .CZRA1180 - Surface Mount Zener Diode
Surface Mount Zener Diode COMCHIP www.comchip.com.tw CZRA1110 Thru CZRA1350 Voltage: 110 - 350 Volts Power: 1.0 Watt Features Ideal for surface mou.TDA1180P - TV HORIZONTAL PROCESSOR
TDA1180P TV HORIZONTAL PROCESSOR s s s s s s s s s NOISE GATED HORIZONTAL SYNC SEPARATOR NOISE GATED VERTICAL SYNC SEPARATOR HORIZONTAL OSCILLA.A1180 - Unipolar Hall-Effect Switch
A1180 – A1184 Preliminary Data Sheet PRELIMINARY DATA SHEET SUBJECT TO CHANGE WITHOUT NOTICE Two-Wire, Programmable, Chopper-Stabilized, Unipolar Hal.HA118059 - (HA118059 / HA118099) 3-Circuit / 2-Point Video Switch
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .HA118099 - (HA118059 / HA118099) 3-Circuit / 2-Point Video Switch
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .HA118002FP - Preamplifier
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .HA118003NT - Matrix Amplifier
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .HA118010MP - 4-Channel Processor
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .HA118082MA - 4-Channel Processor
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .HOA1180 - Reflective Sensor
m o .c U 4 t e e h S a at HOA1180 .D w w w Reflective Sensor • High sensitivity m o .c U 4 t e e h S a t a .D w w w • Wide operating temperature rang.2SA1180 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1180 DESCRIPTION ·With TO-3 package ·High power .2SA1180 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lo.