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2SA1180 - POWER TRANSISTOR

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Part number 2SA1180
Manufacturer Inchange Semiconductor
File Size 207.44 KB
Description POWER TRANSISTOR
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB

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