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2SA1180 Datasheet - Inchange Semiconductor

2SA1180 POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(.

2SA1180_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1180

Manufacturer:

Inchange Semiconductor

File Size:

207.44 KB

Description:

Power transistor.

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2SA1180 2SA1180 POWER TRANSISTOR Inchange Semiconductor

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