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2SA1104 - POWER TRANSISTOR

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Part number 2SA1104
Manufacturer Inchange Semiconductor
File Size 224.26 KB
Description POWER TRANSISTOR
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Description

Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) Good Linearity of hFE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB

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