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2SA1104 Datasheet - Inchange Semiconductor

2SA1104 POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) *Good Linearity of hFE *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T.

2SA1104_InchangeSemiconductor.pdf

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Part number:

2SA1104

Manufacturer:

Inchange Semiconductor

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224.26 KB

Description:

Power transistor.

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