Datasheet4U Logo Datasheet4U.com

2SA1104 POWER TRANSISTOR

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon PNP Power Transistor 2SA1104 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variatio.

📥 Download Datasheet

Preview of 2SA1104 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SA1104
Manufacturer
Inchange Semiconductor
File Size
224.26 KB
Datasheet
2SA1104_InchangeSemiconductor.pdf
Description
POWER TRANSISTOR

Applications

* Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Contin

2SA1104 Distributors

📁 Related Datasheet

📌 All Tags

Inchange Semiconductor 2SA1104-like datasheet