2SA1111 Datasheet, Transistor, Inchange Semiconductor

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2SA1111

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Inchange Semiconductor

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220.25kb

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📄 Datasheet

Description:

Power transistor.

Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min)

Good Linearity of hFE

Complement to Type 2SC259

2SA1111 Application

• Applications
• Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET

TAGS

2SA1111

Inchange Semiconductor

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