2SA1111 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1111 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min). Good Linearity of hFE. Complement to Type 2SC2591. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number: 2SA1111
Manufacturer: Inchange Semiconductor
File Size: 220.25 KB
Datasheet: 2SA1111_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -

2SA1111 Distributors

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2SA1111 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1111-like datasheet