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2SA1111 Datasheet - Inchange Semiconductor

2SA1111 - POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min) *Good Linearity of hFE *Complement to Type 2SC2591 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio frequency drivers and high power amplifier applicat

2SA1111_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1111

Manufacturer:

Inchange Semiconductor

File Size:

220.25 KB

Description:

Power transistor.

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