2SA1111 Datasheet - Inchange Semiconductor

2SA1111, POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1111 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V (Min). Good Linearity of hFE. Complement to Type 2SC2591. Minimum Lot-to-Lot var.

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Datasheet Details

Part number:

2SA1111

Manufacturer:

Inchange Semiconductor

File Size:

220.25 KB

Description:

POWER TRANSISTOR

Applications

* Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -

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2SA1111 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1111-like datasheet