2SA1120 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1120 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V (Min). Low Collector Saturation Voltage- : VCE(sat) = -1. Minimu.

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Datasheet Specifications

Part number: 2SA1120
Manufacturer: Inchange Semiconductor
File Size: 216.64 KB
Datasheet: 2SA1120_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Strobo flash applications
* Audio power amplifer applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICM Coll

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2SA1120 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1120-like datasheet