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2SA1127 Datasheet - Panasonic Semiconductor

2SA1127 - Silicon PNP epitaxial planer type Transistor

Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 5.0±0.2 Unit: mm 4.0±0.2 q q Low noise characteristics. High foward current transfer ratio hFE. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C.

2SA1127 Features

* 0.45

* 0.1 1.27 +0.2 0.45

* 0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO

* 92 EIAJ:SC

* 43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage

2SA1127_PanasonicSemiconductor.pdf