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2SA1018 - Silicon PNP Transistor

Datasheet Summary

Features

  • q High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings.
  • 250.
  • 200.
  • 5.
  • 100.
  • 70 750 150.
  • 55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 0.45.
  • 0.1 1.27 +0.2 0.45.

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Datasheet Details

Part number 2SA1018
Manufacturer Panasonic Semiconductor
File Size 36.64 KB
Description Silicon PNP Transistor
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Full PDF Text Transcription

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Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q High collector to emitter voltage VCEO. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –250 –200 –5 –100 –70 750 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.
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