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2SA1128 - Silicon PNP epitaxial planer type Transistor

Datasheet Summary

Features

  • 0.45.
  • 0.1 1.27 +0.2 0.45.
  • 0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO.
  • 92 EIAJ:SC.
  • 43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO.

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Datasheet Details

Part number 2SA1128
Manufacturer Panasonic Semiconductor
File Size 36.84 KB
Description Silicon PNP epitaxial planer type Transistor
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Transistor 2SA1128 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converter circuits. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –25 –20 –7 –1 – 0.5 600 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 13.5±0.5 5.1±0.2 s Features 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.
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