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2SA1120
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
STROBO FLASH APPLICATIONS.
AUDIO POWER AMPLIFIER APPLICATIONS.
FEATURES
• MIN h F E of 70 at-2V, -4A. -5A Rated Collector Current.
• MAX V CE ( sat ) of -1.0V at -4A I c . 10W at 25° C Case Temperature.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
SYMBOL VcBO VcEO
RATING -35 -20
Emitter-Base Voltage
VEBO
Collector Current
DC _IC_ Pulsed(Note 1) ICP
-5
Emitter Current
DC IE Pulsed(Note 1) *EP
Collector Power Dissipation
Ta=25°C Tc=25°C
1.0 10
Junction Temperature Storage Temperature Range
u_ L stg
150 -55^150
Note 1. Pulse Test : Pulse Width=10ms (Max. )
Duty Cycle=30%(Max.)
unit mmjlii
UNIT V
1. EMITTER
2. COLLECTOR (HEAT SINK)
TO - 126
3.
2SA1120 Datasheet
