2SA1120 Datasheet - Toshiba

2SA1120, Silicon PNP Transistor

: 2SA1120 , SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS.AUDIO POWER AMPLIFIER APPLICATIONS..

datasheet Preview Page 1 from Datasheet4u.com

2SA1120-Toshiba.pdf

2SA1120 Datasheet Preview — Preview of 2SA1120 PDF

Datasheet Details

Part number:

2SA1120

Manufacturer:

Toshiba ↗

File Size:

91.41 KB

Description:

Silicon PNP Transistor

Features

* MIN h F E of 70 at-2V, -4A. -5A Rated Collector Current.
* MAX V CE ( sat ) of -1.0V at -4A I c . 10W at 25° C Case Temperature. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VcBO VcEO RATING -35 -20 Emitter-Base Voltage VEBO

2SA1120 Distributors

📁 Related Datasheet

2SA1121 2SA1122 2SA1123 2SA1124 2SA1125 2SA1127

📌 All Tags

2SA1120 Silicon PNP Transistor Toshiba

Toshiba 2SA1120-like datasheet