2SA1120 Silicon PNP Transistor

Toshiba

Description

: 2SA1120 , SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS.AUDIO POWER AMPLIFIER APPLICATIONS..

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Datasheet Specifications

Part number: 2SA1120
Manufacturer: Toshiba ↗
File Size: 91.41 KB
Datasheet: 2SA1120-Toshiba.pdf
Description: Silicon PNP Transistor

Features

* MIN h F E of 70 at-2V, -4A. -5A Rated Collector Current.
* MAX V CE ( sat ) of -1.0V at -4A I c . 10W at 25° C Case Temperature. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VcBO VcEO RATING -35 -20 Emitter-Base Voltage VEBO

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2SA1120 Silicon PNP Transistor Toshiba

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