2SA1120 Datasheet, Transistor, Toshiba

2SA1120 Features

  • Transistor
  • MIN h F E of 70 at-2V, -4A. -5A Rated Collector Current.
  • MAX V CE ( sat ) of -1.0V at -4A I c . 10W at 25° C Case Temperature. MAXIMUM RATINGS (Ta=25°C) CHARACTERIS

PDF File Details

Part number:

2SA1120

Manufacturer:

Toshiba ↗

File Size:

91.41kb

Download:

📄 Datasheet

Description:

Silicon pnp transistor.

Datasheet Preview: 2SA1120 📥 Download PDF (91.41kb)
Page 2 of 2SA1120

2SA1120 Application

  • Applications AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES
  • MIN h F E of 70 at-2V, -4A. -5A Rated Collector Current.
  • MAX V CE ( s

TAGS

2SA1120
Silicon
PNP
Transistor
Toshiba

📁 Related Datasheet

2SA1120 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SA1120 DESCRIPTION ·With TO-126 package ·High tran.

2SA1120 - POWER TRANSISTOR (Inchange Semiconductor)
isc Silicon PNP Power Transistor 2SA1120 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V (Min) ·Low Collector Saturation Voltage-.

2SA1121 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SA1121 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2618 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Col.

2SA1121 - Silicon PNP Transistor (Kexin)
SMD Type Silicon PNP Epitaxial 2SA1121 SOT-23 Transistors IC Unit: mm Features Low frequency amplifier +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0..

2SA1122 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SA1122 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1122 Absolute Maximum Rat.

2SA1122 - PNP Transistors (Kexin)
SMD Type Features Low frequency amplifier PNP Transistors 2SA1122 TransistIoCrs SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.11.3 -0.1 0.55 .

2SA1122 - Silicon PNP Epitaxial Transistor (Renesas)
2SA1122 Silicon PNP Epitaxial Application Low frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 REJ03G063.

2SA1123 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 5.1±0.2 Unit: m.

2SA1123 - Silicon NPN epitaxial planer type Transistor (Panasonic Semiconductor)
Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 5.1±0.2 Unit: m.

2SA1124 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 5.9± 0.2 Unit: .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts