Part number:
2SA1120
Manufacturer:
File Size:
91.41 KB
Description:
Silicon pnp transistor.
* MIN h F E of 70 at-2V, -4A. -5A Rated Collector Current.
* MAX V CE ( sat ) of -1.0V at -4A I c . 10W at 25° C Case Temperature. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VcBO VcEO RATING -35 -20 Emitter-Base Voltage VEBO
2SA1120
91.41 KB
Silicon pnp transistor.
📁 Related Datasheet
2SA1120 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1120
DESCRIPTION ·With TO-126 package ·High tran.
2SA1120 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SA1120
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -20V (Min) ·Low Collector Saturation Voltage-.
2SA1121 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SA1121
Silicon PNP Epitaxial
Application
• Low frequency amplifier • Complementary pair with 2SC2618
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Col.
2SA1121 - Silicon PNP Transistor
(Kexin)
SMD Type
Silicon PNP Epitaxial 2SA1121
SOT-23
Transistors IC
Unit: mm
Features
Low frequency amplifier
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
+0..
2SA1122 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SA1122
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SA1122
Absolute Maximum Rat.
2SA1122 - PNP Transistors
(Kexin)
SMD Type
Features
Low frequency amplifier
PNP Transistors 2SA1122
TransistIoCrs
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
Unit: mm
+0.11.3 -0.1
0.55 .
2SA1122 - Silicon PNP Epitaxial Transistor
(Renesas)
2SA1122
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
REJ03G063.
2SA1123 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2631
5.1±0.2
Unit: m.
