2SA1105 Datasheet - Inchange Semiconductor

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2SA1105 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1105 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variatio.

2SA1105_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1105

Manufacturer:

Inchange Semiconductor

File Size:

223.98 KB

Description:

POWER TRANSISTOR

Applications

* Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipatio

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2SA1105 POWER TRANSISTOR Inchange Semiconductor

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