2SA1112 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1112 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min). Good Linearity of hFE. Complement to Type 2SC2592. Minimum Lot-to-Lot var.

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Datasheet Specifications

Part number: 2SA1112
Manufacturer: Inchange Semiconductor
File Size: 220.31 KB
Datasheet: 2SA1112_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -

2SA1112 Distributors

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2SA1112 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1112-like datasheet