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2SA1112 - POWER TRANSISTOR

2SA1112 Description

isc Silicon PNP Power Transistor 2SA1112 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V (Min). Good Linearity of hFE. Complement to Type 2SC2592. Minimum Lot-to-Lot var.

2SA1112 Applications

* Designed for audio frequency drivers and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -

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POWER TRANSISTOR Inchange Semiconductor
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