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2SA1107 - POWER TRANSISTOR

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Part number 2SA1107
Manufacturer Inchange Semiconductor
File Size 219.61 KB
Description POWER TRANSISTOR
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Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) Good Linearity of hFE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector P

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