2SA1107 Datasheet - Inchange Semiconductor

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2SA1107 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1107 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variatio.

2SA1107_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1107

Manufacturer:

Inchange Semiconductor

File Size:

219.61 KB

Description:

POWER TRANSISTOR

Applications

* For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ T

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2SA1107 POWER TRANSISTOR Inchange Semiconductor

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