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2SA1107 Datasheet - Inchange Semiconductor

2SA1107 POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) *Good Linearity of hFE *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

2SA1107_InchangeSemiconductor.pdf

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2SA1107

Manufacturer:

Inchange Semiconductor

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219.61 KB

Description:

Power transistor.

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2SA1107 2SA1107 POWER TRANSISTOR Inchange Semiconductor