Datasheet4U Logo Datasheet4U.com

2SA1129 - POWER TRANSISTOR

📥 Download Datasheet

Preview of 2SA1129 PDF
datasheet Preview Page 2

2SA1129 Product details

Description

Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max)@IC= -3A Large Current Capability-IC= -7A Complement to Type 2SC2654 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is ideal for use as a ramp driver.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -

📁 2SA1129 Similar Datasheet

  • 2SA1120 - Silicon PNP Transistor (Toshiba)
  • 2SA1121 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SA1122 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SA1123 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SA1124 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SA1125 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1127 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SA1128 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
Other Datasheets by Inchange Semiconductor
Published: |