2SA1102 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1102 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device performa.

📥 Download Datasheet

2SA1102 Datasheet Preview — Preview of 2SA1102 PDF

Datasheet Specifications

Part number: 2SA1102
Manufacturer: Inchange Semiconductor
File Size: 221.81 KB
Datasheet: 2SA1102_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IB Base Current-Continuo

2SA1102 Distributors

📁 Related Datasheet

2SA1103 2SA1104 2SA1105 2SA1106 2SA1107 2SA1108

📌 All Tags

2SA1102 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1102-like datasheet