2SA1117 Datasheet, Transistor, Inchange Semiconductor

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2SA1117

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Inchange Semiconductor

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207.95kb

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📄 Datasheet

Description:

Power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min.)

High Power Dissipation

Complement to Type 2SC

2SA1117 Application

• Applications
• Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

TAGS

2SA1117

Inchange Semiconductor

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