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2SA1117 - POWER TRANSISTOR

2SA1117 Description

isc Silicon PNP Power Transistor 2SA1117 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min. High Power Dissipation. Complement to Type 2SC2608. Minimum Lot-to-Lot.

2SA1117 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -17 A IB Base Current-Continuous

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