2SA1117 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1117 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min. High Power Dissipation. Complement to Type 2SC2608. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SA1117
Manufacturer: Inchange Semiconductor
File Size: 207.95 KB
Datasheet: 2SA1117_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -17 A IB Base Current-Continuous

2SA1117 Distributors

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2SA1117 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1117-like datasheet