2SA1108 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1108 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -130V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variatio.

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Datasheet Specifications

Part number: 2SA1108
Manufacturer: Inchange Semiconductor
File Size: 220.46 KB
Datasheet: 2SA1108_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ T

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2SA1108 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1108-like datasheet