2SA1106 POWER TRANSISTOR

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min). Good Linearity of hFE. High Power Dissipation. Complement to Type 2SC2581.

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Datasheet Specifications

Part number: 2SA1106
Manufacturer: Inchange Semiconductor
File Size: 202.09 KB
Datasheet: 2SA1106_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A IB Base Current-

2SA1106 Distributors

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2SA1106 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1106-like datasheet