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2SA1109 - POWER TRANSISTOR

2SA1109 Description

isc Silicon PNP Power Transistor 2SA1109 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min. High Power Dissipation. Minimum Lot-to-Lot variations for robust device per.

2SA1109 Applications

* Designed for audio frequency amplifier and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -

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