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2SA1109 Datasheet - Inchange Semiconductor

2SA1109 POWER TRANSISTOR

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio frequency amplifier and high power amplifier applications. ABSOLUTE MAXIMUM RAT.

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Part number:

2SA1109

Manufacturer:

Inchange Semiconductor

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208.36 KB

Description:

Power transistor.

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2SA1109 2SA1109 POWER TRANSISTOR Inchange Semiconductor