2SA1109 Datasheet - Inchange Semiconductor

POWER TRANSISTOR

2SA1109 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) *High Power Dissipation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio frequency amplifier and high power amplifier applications. ABSOLUTE MAXIMUM RAT.

2SA1109 Datasheet (208.36 KB)

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2SA1109

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Inchange Semiconductor

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Power transistor.

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2SA1109 POWER TRANSISTOR Inchange Semiconductor

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2SA1109 General Description

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